GaAs Hall Effect Element CYSJ106DFN

GaAs Hall Effect Element CYSJ106DFN
Quantity Unit price
until 9 € 3.96 *
from 10 € 3.45 *
from 20 € 3.00 *
from 50 € 2.61 *
from 100 € 2.26 *
from 200 € 1.98 *
from 500 € 1.71 *
from 1000 € 1.43 *
from 3000 € 1.29 *
from 5000 € 1.14 *

Prices incl. VAT excl. Shipping Costs

Ready for shipping, delivery time 1-3 workdays
     for quantities up to available stock of 995 pieces (3-4 weeks if more)

Description Technical Properties Data Sheets
Description
CYSJ106DFN series Hall-effect element is an ion-implanted magnetic field sensor made of... more
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GaAs Hall Effect Element CYSJ106DFN

CYSJ106DFN series Hall-effect element is an ion-implanted magnetic field sensor made of mono-crystal gallium arsenide (GaAs) semiconductor material group Ⅲ-V using ion-implanted technology. It can convert a magnetic flux density signal linearly into voltage output.

FEATURES

  • High Linearity 
  • Superior Temperature Stability 
  • Miniature Package 
  • Wide measuring range 0-3T

TYPICAL APPLICATION

  • Magnetic Field Measurement
  • DC Brushless Motor
  • Current Sensor
  • Non-contact Switch
  • Position Control
  • Detection Of Revolution
Technical Properties
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Operating Temperature: -40°C ~ +125°C
Measuring range: 3T
Max. Sensitivity: 1.80 ~ 2.4 mV/mT
Linearity: 2%
Input/Output Resistance: 650 ~ 850 kΩ/ 650 ~ 850kΩ
Package/Size: DFN/1.2x0.5x0.3mm
Max. Supply current/voltage: 11mA/9.5V
Data Sheets
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Data sheets to download:
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