GaAs Hall Effect Elements CYSJ902, Max. Sensitivity: 1.44 ~ 2.16 (mV/mT), Measuring range: 2T

GaAs Hall Effect Elements CYSJ902, Max. Sensitivity: 1.44 ~ 2.16 (mV/mT), Measuring range: 2T
from € 0.46 *

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Description Technical Properties Data Sheets
Description
CYSJ902 series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal... more
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GaAs Hall Effect Elements CYSJ902, Max. Sensitivity: 1.44 ~ 2.16 (mV/mT), Measuring range: 2T

CYSJ902 series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide (GaAs) semiconductor material group III-V using ion-implanted technology. It can convert a magnetic flux density signal linearly into voltage output.

FEATURES

  • High Linearity 
  • Superior Temperature Stability 
  • Miniature Package 
  • Replacements of THS119, KSY14 and KSY44 etc.

TYPICAL APPLICATION

  • Magnetic Field Measurement 
  • DC Brushless Motor 
  • Current Sensor 
  • Non-contact Switch 
  • Position Control 
  • Detection of Revolution
Technical Properties
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Operating Temperature: -40°C ~ +125°C
Measuring range: 3T
Input/Output Resistance: 650 ~ 850 kΩ/ 650 ~ 850kΩ
Linearity: ±1,0%
Package/Size: SIP/2.75x2.8x0.9mm
Max. Supply current/voltage: 13 mA/12 V
Max. Sensitivity: 1.44 ~ 2.16 mV/mT
Data Sheets
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Data sheets to download:
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